High-Electron-Mobility Gan Grown On Free-Standing Gan Templates By Ammonia-Based Molecular Beam Epitaxy
JOURNAL OF APPLIED PHYSICS(2014)
摘要
The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n(-) -GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (similar to 2 x 10(6) cm(-2) to similar to 2 x 10(10) cm(-2)) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (similar to 2 similar to 10(6) cm(-2)) resulted in electron mobilities of 1265 cm(2)/Vs at 296K and 3327 cm(2)/ Vs at 113 K. (C) 2014 AIP Publishing LLC.
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