Electrostatic-Discharge-Induced Degradation Of 1.3 Mu M Algainas/Inp Buried Heterostructure Laser Diodes
JOURNAL OF APPLIED PHYSICS(2009)
摘要
Degradation of 1.3 mu m AlGaInAs buried heterostructure laser diodes due to electrostatic discharge (ESD) is studied. The degradation mechanism of this material has not previously been clear and so the ESD tolerance was evaluated. Degradation occurred at 0.5 and 2.5 kV for forward and reverse polarities, respectively. Because that ESD tolerance for forward polarity is insufficient for practical applications, we focused on it in analyzing the degradation mechanism. Elliptically shaped melted regions are observed in the active layer of the facet. Such regions developed inside a cavity under the application of ESD pulses. These results indicate that degradation is caused by melting due to optical absorption. (C) 2009 American Institute of Physics. [doi:10.1063/1.3245389]
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关键词
compound distribution,gallium arsenide,electrostatic discharge
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