Effect Of Composition On The Band Gap Of Strained Inxga1-Xn Alloys
JOURNAL OF APPLIED PHYSICS(2003)
摘要
The band gap of pseudomorphically strained InxGa1-xN alloys has been measured using optical absorption spectroscopy. X-ray diffraction measurements indicated that the in-plane lattice parameter of the InxGa1-xN film equaled that of the underlying GaN layer. For strained InxGa1-xN, it was determined that the band gap shift versus composition is given by dE(g)/dx=-4.1 eV for x<0.12. Our results contradict some recent reports that InxGa1-xN has a relatively small bowing parameter. Possible reasons for the discrepancies are discussed. (C) 2003 American Institute of Physics.
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关键词
band gap,energy gap,lattice parameter,x ray diffraction
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