Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structuresMarka y polyakov[0]leewoon jang[0]dongseob joinhwan lee[0]n b smirnov[0]a v govorkov[0]e a kozhukhova[0]kwang hyeon baik[0]sungmin hwang[0]Journal of Applied Physics, 2012.Cited by: 4|Bibtex|Views1|DOI:https://doi.org/10.1063/1.3680877Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
