Angle-Dependent Differential-Photovoltage Spectroscopy For The Characterization Of A Gaas/Gaalas Based Vertical-Cavity Surface-Emitting Laser Structure
JOURNAL OF APPLIED PHYSICS(2002)
摘要
An angle-dependent wavelength-modulated differential-photovoltage spectroscopy (DPVS) investigation has been performed at room temperature on a bare as-grown wafer of GaAs/GaAlAs-based vertical-cavity surface-emitting laser (VCSEL) structure, designed for emitting at a wavelength near 850 nm. The differential-photovoltage (DPV) spectra exhibit both the fundamental conduction to heavy-hole excitonic transition and cavity mode plus an interference pattern related to the mirror stacks. By changing the angle of incidence in the DPV measurements the energy positions of the cavity mode and distributed Bragg reflector features show a blueshift while the excitonic transition remains unchanged. The energies of the excitonic transition and cavity mode are accurately determined from the DPV spectra. The advantages of DPVS in relation to other methods of characterizing VCSEL structures, such as surface photovoltage, photoreflectance, photocurrent, and differential photocurrent spectroscopy, are discussed. The results demonstrate considerable potential of DPVS for the nondestructive characterization of these structures at room temperature. (C) 2002 American Institute of Physics.
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关键词
gallium arsenide,thin film,vertical cavity surface emitting laser,distributed bragg reflector,surface temperature,room temperature
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