High Mobility In0.53ga0.47as Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures

In this paper, we demonstrate high electron mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al2O3 (gate dielectric)/In0.53Ga0.47As-In0.52Al0.48As (barrier)/In0.53Ga0.47As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situ chemical vapor deposition (CVD) Al2O3 displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al2O3, which indicates that CVD process resulted in a lower Al2O3/In0.53Ga0.47As interfacial defect density. A gate bias was applied to the structure with CVD Al2O3, and a peak mobility of 9243 cm(2)/V s at a carrier density of 2.7 x 10(12) cm(-2) was demonstrated for the structure with a 4 nm In0.53Ga0.47As-In0.52Al0.48As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In0.53Ga0.47As MOSFET structures. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4721328]