Formation mechanism of threading-dislocation array in AlN layers grown on 6H-SiC (0001) substrates with 3-bilayer-high surface stepsMarkhironori okumura[0]tsunenobu kimoto[0]jun suda[0]Applied Physics Letters, 2014.Cited by: 4|Bibtex|Views1|DOI:https://doi.org/10.1063/1.4892807Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
