Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching
Journal of Alloys and Compounds(2014)
摘要
•Porous GaN template was prepared by electrochemical and photoelectrochemical etching scheme.•InGaN/GaN light-emitting diode (LED) structure was overgrown on the etched GaN template.•Overgrown GaN films and LEDs showed lower strain and lower density of surface defects.•The overgrown LED structures showed enhanced electroluminescence efficiency.
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关键词
Electrochemical etching,Photo-electrochemical etching,Porous GaN,Light-emitting diodes
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