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Separation of laterally overgrown GaN template by using selective electrochemical etching

Journal of Alloys and Compounds, (2012): 59-62

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Selective lateral electrochemical etching was employed for detaching a GaN layer with lowered dislocation density produced by maskless epitaxial lateral overgrowth (ELO) process. The dislocation density in the ELO regions was more than an order of magnitude lower than in the reference regions. The separation of the ELO GaN template from s...更多

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