Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristicsMarkdaiying lee[0]tsungling tsai[0]tseungyuen tseng (曾俊元)[0]Applied Physics Letters, 2013.Cited by: 8|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4816053Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
