Room Temperature Resistive State Switching with Hysteresis in Gdmno3 Thin Film with Low Threshold Voltage

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO3 grown on NdGaO3 substrate. The switched states have a resistance ratio ≈103. The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias.