Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beamMarkakira uedono[0]tatsuya fujishima[0]daniel piedra[0]nakaaki yoshiharashoji ishibashi[0]masatomo sumiya[0]oleg laboutin[0]w f johnson[0]tomas palacios[0]Applied Physics Letters, 2014.Cited by: 3|Bibtex|Views0|DOI:https://doi.org/10.1063/1.4892834Other Links: academic.microsoft.comKeywords: chemical vapor depositionorganometallic compoundstitaniumannealingnitrogenMore(3+)Code: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
