Ambipolar Bistable Switching Effect Of Graphene

APPLIED PHYSICS LETTERS(2010)

引用 31|浏览10
暂无评分
摘要
Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. An opposite sequence of switching with different charge carriers, holes, and electrons is found. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching. To confirm this hypothesis, one-level transport model simulations including charging effect are performed and the results are consistent with our experimental data. Methods of improving the on/off ratio of graphene resistive switching are suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532849]
更多
查看译文
关键词
spin polarization,field effect transistor
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要