Anomalous Behavior Of Negative Bias Illumination Stress Instability In An Indium Zinc Oxide Transistor: A Cation Combinatorial Approach

This study examined the effects of the indium fraction in indium zinc oxide (IZO) on the performance and stability of IZO thin film transistors (TFTs). The field-effect mobility and sub-threshold swing were much improved with increasing In fraction; 41.0 cm(2)/Vs and 0.2V/decade, respectively, at 85 at. % In, compared to 1.1 cm(2)/Vs and 2.4V/decade of ZnO TFTs. In contrast, a local minimum negative bias illumination stress instability was observed near 73-77 at. % In. This behavior was explained by a poly-crystalline to amorphous phase transition in IZO thin films. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4748884]