N-Channel Metal-Oxide-Semiconductor Characterization With Static And Dynamic Backside Laser Reflectance Modulation Techniques

An n-channel metal-oxide-semiconductor (NMOS) transistor has been characterized using backside laser reflectance modulation based on static and dynamic techniques. The static techniques do not have the required sensitivity. With the dynamic technique, the reflectance modulations of the channel at different operating points of the NMOS transistor are distinct, with the pinch-off clearly visible. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3633108]