Investigation Of Carrier Transport Properties In Semipolar (11(2)Over-Bar2) Gan Films With Low Defect Density

We report on the anisotropic carrier transport properties of semipolar (11 (2) over bar2) GaN films with low defect density. We utilized the asymmetric lateral epitaxy to obtain various semipolar (11 (2) over bar2) GaN films having significantly reduced partial dislocations and basal-plane stacking faults (BPSFs). The directionally dependent carrier transport was observed with the lower sheet resistances (R-sh) along the [1 (1) over bar 00] direction. The R-sh ratios of semipolar (11 (2) over bar2) GaN films were found to be relatively smaller than those of nonpolar alpha-plane GaN films, possibly due to low BPSF density and the reduced in-plane electric field induced by BPSF along the [11 (2) over bar3] direction at wurtzite domain boundaries. (C) 2013 AIP Publishing LLC.