Schottky-Barrier Height Measurement By Electron-Beam Induced Voltage

We demonstrate that electron‐beam induced voltage (EBIV) technique can be used for direct measurement of Schottky (or p‐n junction) barrier height. Schottky barrier heights of PtSi, Pd2Si, and TiSi2 on n‐type (111) Si measured by this technique were found to be 0.84, 0.74, and 0.57 eV, respectively, in excellent agreement with values obtained by the standard current‐voltage technique. Because of no complication due to leakage current in EBIV measurement, this technique is particularly suited for studying the formation of low barrier height Schottky diodes. Furthermore, this technique can be extended for in situ measurements of barrier height to supplement surface electron spectroscopy studies on the electrical and chemical characteristics of silicide/Si interfaces.