Role Of Near-Surface States In Ohmic-Schottky Conversion Of Au Contacts To Zno

APPLIED PHYSICS LETTERS(2005)

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摘要
A conversion from ohmic to rectifying behavior is observed for Au contacts on atomically ordered polar ZnO surfaces following remote, room-temperature oxygen plasma treatment. This transition is accompanied by reduction of the "green" deep level cathodoluminescence emission, suppression of the hydrogen donor-bound exciton photoluminescence and a similar to 0.75 eV increase in n-type band bending observed via x-ray photoemission. These results demonstrate that the contact type conversion involves more than one mechanism, specifically, removal of the adsorbate-induced accumulation layer plus lowered tunneling due to reduction of near-surface donor density and defect-assisted hopping transport. (c) 2005 American Institute of Physics.
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关键词
band gap,electron density,schottky barrier,band structure,work function,room temperature,ohmic contact,double layer,zinc
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