Measurement Of The Minority-Carrier Mobility In The Base Of Heterojunction Bipolar-Transistors Using A Magnetotransport Method

Y Betser,Dan Ritter,Gad Bahir,S I Cohen, Jonathan Sperling

APPLIED PHYSICS LETTERS（1995）

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摘要

The minority carrier mobility in the base of an InP/GaInAs heterojunction bipolar transistor (HBT) is obtained by measuring the change in base current induced by a magnetic field applied perpendicular to the direction of the current flow. The obtained mobility is consistent with results of the zero-field time of flight technique. (C) 1995 American Institute of Physics.

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关键词

heterojunction bipolar transistor,time of flight,bipolar transistor,gallium arsenide,magnetic field

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