Pseudo-Square Algan/Gan Quantum Wells For Terahertz Absorption
APPLIED PHYSICS LETTERS(2014)
摘要
THz intersubband transitions are reported down to 160 mu m within AlGaN/GaN heterostructures following a 4-layer quantum well design. In such a geometry, the compensation of the polarization-induced internal electric field is obtained through creating a gradual increase in polarization field throughout the quantum "trough" generated by three low-Al-content layers. The intersubband transitions show tunable absorption with respect to doping level as well as geometrical variations which can be regulated from 53 to 160 lm. They also exhibit tunnel-friendly designs which can be easily integrated into existing intersubband device architectures. (C) 2014 AIP Publishing LLC.
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