Characteristics Of Indium Incorporation In Ingan/Gan Multiple Quantum Wells Grown On A-Plane And C-Plane Gan
APPLIED PHYSICS LETTERS(2012)
摘要
We investigated the characteristics of InGaN-based multiple quantum wells (MQWs) grown on a-plane and c-plane GaN templates, which were grown by metal-organic chemical vapor deposition onto r-plane and c-plane sapphire, respectively. A shorter photoluminescence peak wavelength and peaks with larger full-width at half-maximum are observed for MQWs grown on an a-plane GaN template compared with a c-plane GaN template, despite the same growth conditions used. A growth model based on the atomic configuration of the growing surfaces is proposed to explain the difference in optical emission properties and indium incorporation between a-plane and c-plane MQWs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4720507]
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