Effect Of H On Interface Properties Of Al2o3/In0.53ga0.47as

We report that depositing Al2O3 on InGaAs in an H-containing ambient (e. g., in forming gas) results in significant reduction of interface-trap density and significantly suppressed frequency dispersion of accumulation capacitance. The results of the inelastic electron tunneling spectroscopy study reveal that strong trap features at the Al2O3/InGaAs interface in the InGaAs band gap are largely removed by depositing Al2O3 in an H-containing ambient. Transmission electron microscopy images and x-ray photoelectron spectroscopy data shed some light on the role of hydrogen in improving interface properties of the Al2O3/In0.53Ga0.47As gate stack. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665395]