Directed Growth Of Nickel Silicide Nanowires

Deposition of nickel silicide nanowires has been achieved in the temperature range of 320 to 420degreesC by decomposition of silane on nickel surfaces. The substrates consisted of Ni foils and thin Ni films (similar to10-100 nm) evaporated on 1-mum-thick layers of SiO2 predeposited on Si wafers. Nanowire growth between two metal pads was achieved with aid of an electric field. It was found that thinner diameter nanowires were produced at low temperatures and that the density of the nanowires was dependent on the reactor pressure. The current-voltage relationship of these nanowires has also been examined. (C) 2004 American Institute of Physics.