Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High- k Film - Device Performance and Light Wavelength Effects

The nanocrystalline molybdenum oxide embedded Zr-doped HfO 2 high- k nonvolatile memory device has been fabricated using the one pumpdown sputtering process and a rapid thermal annealing step. The majority embedded molybdenum existed in the MoO 3 nanocrystal form but a small amount of metallic molybdenum was also detected. The memory function of this device was based on the hole trapping-and-detrapping mechanism. The embedded nanocrystals retained charges after the breakdown of the high- k stack. The charge storage capacity was influenced by light exposure, especially the wavelength. The silicon/high- k interface was also affected by the exposed light. This study provided an insight of the function of the embedded nanocrystals and the light effects on the device.