Loading Effect Parameters At Dry Etcher System And Their Analysis At Mask-To-Mask Loading And Within-Mask Loading
21ST ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2(2002)
摘要
The Cr etch rate is affected by Cr density to be etched at the photomask. Different mask-to-mask and within-mask pattern densities have made difficult to control the final CD (critical dimension). We have tested loading effect using binary Cr mask with ZEP7000 (3000 Angstrom) photoresist. The loading effect was evaluated for the masks fabricated at the various dry etch conditions with different within-mask Cr loading. The Cr etch rate and selectivity was observed at various process conditions and relations between parameters of dry etch process and Cr loading were evaluated. The horizontal and the vertical Cr etch rates were investigated and the process parameter dependence on the Cr loading was analyzed. The horizontal and the vertical photoresist etch rates were evaluated for the photoresist loading effect. The cause of mask-to-mask loading and within-mask loading are mainly from Cr loading and photoresist loading, respectively. The Cr loading is mainly affected by source power, pressure, and gas flow. Photoresist loading is mainly dependent on source power, DC bias, pressure, and Cl-2/O-2 ratio. In our system, within-mask Cr loading is strongly dependent on the process parameters when the selectivity of Cr to PR is below than 1. If uniformity and selectivity are acceptable, high DC bias, high gas flow, low pressure, and high Cl-2/O-2 ratio are recommended to reduce loading effect.
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关键词
photomasks,low pressure,etching
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