A Study of Structural Damage & Recovery of Si, Ge and Ga FIB implants in Silicon

The focused ion beam (FIB) has the necessary precision, spatial resolution and control over ion delivery for potential nano-scale doping of nanostructures such as semiconductor quantum dots (QDs). The ion current density in a FIB is 0.1-10 A/cm 2 , which is at least three orders of magnitude higher than that in a commercial broad beam ion implanter. Therefore an understanding of FIB implantation damage and recovery is of substantial interest. In this work we employ Raman probes of wavelengths 514 nm and 405 nm for quantifying ion implantation damage—both before and after annealing—in 30 kV Si 2+ , Ge 2+ and Ga + implants (fluences: 1×10 -5×10 15 ions/cm 2 ) into Si(100), for the purpose of understanding the effect of ion species on damage recovery.