Process Integration Of Iald Tan For Advanced Cu Interconnects

Hui-Jung Wu,Sanjay Gopinath, Kenneth Jow,Emery Kuo, Victor Lu,Kie-Jin Park,Roey Shaviv,Tom Mountsier,Girish Dixit

2011 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE AND MATERIALS FOR ADVANCED METALLIZATION (IITC/MAM)（2011）

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摘要

A high density/low resistivity TaN film grown using ion-induced atomic layer deposition (iALD) has been developed as the metal barrier for nano-scale Cu interconnects. Excellent conformalilty and Cu barrier performance enable the use of thin iALD TaN as the metal barrier. Integration of this film has demonstrated improvement in line and via resistance while maintaining robust electromigration (EM), via stress migration (VSM), and dielectric reliability performance.

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关键词

reliability,resistance,electromigration,process integration,atomic layer deposition,electrical resistivity,cu,films,copper,annealing,dielectrics,nanoelectronics

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