Nanocrystalline MoOx Embedded ZrHfO High-k Memories - Charge Trapping and Retention Characteristics

ECS Transactions, pp. 203-209, 2012.

Cited by: 4|Views6

Abstract:

The nonvolatile memory properties of metal-oxide-semiconductor memory capacitors containing nanocrystalline MoOx embedded ZrHfO high-k gate dielectric have been investigated. The charge trapping capacity and trapping site were investigated using the capacitance-voltage hysteresis and constant voltage stress methods. The memory functions w...More

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