Numerical Analysis Of Cds/Pbse Room Temperature Mid-Infrared Heterojunction Photovoltaic Detectors
INFRARED TECHNOLOGY AND APPLICATIONS XLI(2015)
摘要
Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is discussed as to provide guidelines for practical improvement, based on the previous experimental exploration [1]. In our experiment work, the polycrystalline CdS film was prepared in hydro-chemical method on top of the single crystalline PbSe grown by molecular beam epitaxy method. The preliminary results demonstrated a 5.48x10(8) Jones peak detectivity at lambda=4.7 mu m under zero-bias. However, the influence of some material and device parameters such as carrier concentration, interface recombination velocity remains uncertain. These parameters affect the built-in electric field and the carriers' transportation properties, and consequently could have detrimental effect on the device performance of the CdS/PbSe detector. In this work, therefore, the numerical analysis is performed based on these parameters. The simulation results suggest that the device performance can be improved at least 4 times by increasing CdS concentration for two orders of magnitudes, and the device performance will degrade severely if the interface recombination speed is over 10(4) cm/s.
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关键词
lead salt, uncooled, heterojunction, mid-infrared photovoltaic detectors
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