Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, pp. 48-52, 2014.

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Abstract:

In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the ...More

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