Film Properties And Integration Performance Of A Nano-Porous Carbon Doped Oxide
PROCEEDINGS OF THE IEEE 2004 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE(2004)
摘要
A porous carbon doped oxide has been developed using a conventional PECVD reactor. Sequential electron beam treatment using a flood beam provides a means for removal of the thermally labile organic species and results in a porous material with high thermal stability. Film properties and integration results presented show the viability of integrating this film into a conventional dual damascene interconnect flow.
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关键词
thermal stability,chemical vapor deposition,copper,dielectric materials,carbon,electron beam,organic materials,films,permittivity
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