Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells

Dilute nitride (In, Ga)(As, N) alloys grown on GaAs substrate are a very attractive materials for optoelectronics. In this work we compare the optical properties of (In, Ga)(As, N)/GaAs triple quantum well grown by atmospheric pressure metal organic vapour phase epitaxy. As grown and annealed structures were investigated by means of photoluminescence and contactless electroreflectance spectroscopies. Energies of fundamental transition from each measurement were determined and compared, moreover the value of Stokes shift was assigned and discussed.