Electrical Performance Of Local Bottom-Gated Mos2 Thin-Film Transistors
JOURNAL OF INFORMATION DISPLAY(2014)
摘要
This paper reports the unique electronic properties of the local bottom-gated MoS2 thin-film transistors (TFTs) fabricated on glass substrates. The current-voltage (I-V) characteristics of field effect transistors exhibited the on/off ratio of similar to 1 x 10(6) and mobility higher than 20 cm(2) V (1) s (1). The doping concentration of MoS2 flakes extracted by capacitance-voltage (C-V) measurement is approximately 10(16)-10(17) cm(-3). These results demonstrate that the electrical performance of the local bottom-gated TFTs are comparable with the conventional TFTs, providing important technical implications on the feasibility of MoS2 TFTs.
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关键词
transition metal dichalcogenide, local bottom-gated, MoS2, thin-film transistor
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