The effect of interfacial oxide and high-κ thickness on NMOS Vth shift from plasma-induced damage

Jie Zhou,Chinung Ni,Osbert Chan,Shiyu Sun, Wesley Suen, Sherry Mings,M J Bevan,Patricia M Liu,Peter Hsieh,Chorngping Chang,Raymond Hung

2014 Silicon Nanoelectronics Workshop (SNW)（2014）

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摘要

Different thicknesses of interfacial oxide and high-κ were used to study the effects of plasma-induced damage (PID) in NMOS transistors. The thickness of high-κ HfO ₂ was varied from 15Å to 25Å. The thickness of the interfacial layer (IL) with N ₂ O/H ₂ was also varied from 5Å to 10Å. The threshold voltage (V _th ) shift was observed to be greater in the thinner oxide using the same plasma condition. There was no significant effect with different IL thickness between 5Å and 10Å.

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关键词

interfacial oxide,high-κ thickness,NMOS transistor,threshold voltage shift,plasma-induced damage,PID,interfacial layer thickness,plasma condition,HfO2

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