Laser-Induced Epitaxial Growth Technology for Monolithic Three Dimensional Integrated Circuits

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, pp. P230-P234, 2013.

Cited by: 2|Views3

Abstract:

Laser-induced epitaxial growth process has been developed to obtain single crystalline silicon on insulator using a seed which is formed by selective epitaxial growth process. It was found that the lateral epitaxial growth of molten silicon occurs when the energy density of the laser beam is high enough to completely melt the deposited am...More

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