Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al[subscript 2]O[subscript 3] PassivationMarkshiping guo[0]j m tiradoxiang gao[0]omair i saadat[0]jae w chungtomas palacios2009.Cited by: 0|Bibtex|Views0Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceUpload PPTYour rating :0 TagsCommentsSubmit
