Direct and Polymer Bonding of Iii-V to Processed Silicon-On-Insulator for Hybrid Silicon Evanescent Lasers Fabrication

We report the use of both direct and polymer bonding for the fabrication of Silicon/III-V evanescent laser. III-V structure is transferred to processed silicon-on-insulator (SOI) substrate at low temperature with a yield over 98%. We demonstrated the advantage of using a thick oxide layer (>100 nm), allowed by the innovative design, for limiting the void formation at the bonding interface. Silicon/III-V evanescent laser have been realized. The investigated device operates under quasi-continuous wave regime. The room temperature threshold current is 100 mA, the side mode suppression ratio is as high as 20dB, and the fiber-coupled output power is ~7mW.