Time-Resolved Photoluminescence of Wideband Gap Semiconductor Devices
Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)(2007)
摘要
The use of optical gating by frequency downconversion to study UV optoelectronic devices provides information on carrier recombination dynamics with sub-picosecond resolution. Measurement of active LEDs undergoing current injection and measurement of stimulated emission from UV laser cavities is demonstrated.
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关键词
Board-Level Optical Interconnects,Semiconductor Lasers,Vertical-Cavity Surface-Emitting Lasers (VCSELs),Optoelectronic Integration,Optical Interconnects
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