Improvement of Si doping of In 0.53 Ga 0.47 As fin by heated implantMarkbingxi woodchristopher hatem[0]xinyu bao[0]hongwen zhouming zhangmiao jinhao chenmanping caisamuel swaroop munnangimotoya okazaki[0]errol antonio c sanchez[0]adam brand2015.Cited by: 1|Bibtex|Views1Other Links: academic.microsoft.comCode: Data: Full Text (Upload PDF)PPT (Upload PPT)SimilarReferenceCitedUpload PPTYour rating :0 TagsCommentsSubmit
