Electrical properties of thermally annealed CdS thin films obtained by chemical bath deposition

Electrical conductivity and the Hall-effect are investigated in the temperature interval (80-400) K on thermally annealed in H ₂ CdS thin films obtained by chemical bath deposition. Different characters of the temperature dependence of conductibility are observed in the CdS films annealed at different temperatures. The Hall measurements allow calculating the values of the N _A , N _D , n _ex and E _D . According to Hall measurements the CdS films show several donor levels at different energetic depths in dependence of the annealing temperature. The sample annealed at high temperatures than 350°C proves to be compensated with a sharply decreasing electrical conductivity with the temperature decrease.