High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, pp. 169-174, 2014.

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Abstract:

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of 300 cm(2)/Vs, which guarantees "device quality". In ad...More

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