The Pulsed I d -V g methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE(2010)
摘要
Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-kappa dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (Delta V-t), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-kappa gate dielectric devices.
更多查看译文
关键词
High-kappa,pulse I-V,threshold voltage instability,fast transient charge trapping,mobility,bias temperature instability,hafnium,MOSFET
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络