Dependency Of Nand Flash Memory Cells On Random Dopant Fluctuation (Rdf) Effects

Jun Geun Kang,Boram Han,Kyoungrok Han,S J Chung,Gyuseog Cho,Sungkye Park,Woo Young Choi

2012 12TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM（2012）

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摘要

Dependency of random-dopant-fluctuation (RDF) on NAND flash memory cells has been simulated. It has been shown that the RDF effects are more serious in NAND flash memory cells than in CMOS devices. The simulation results show the variation of threshold voltage, on- and off-current depending on the doping concentration. Also, the program and erase characteristics of NAND flash memory cells have been evaluated depending on the RDF effects.

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关键词

random dopant fluctuation (RDF), NAND flash memory cell, and threshold voltage

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