Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES III(2011)
摘要
Directed self-assembly is an emerging technology that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have seen many promising demonstrations of forming self-assembled structures with small half pitch (<15 nm), registration control, and various device-oriented shapes. Now, the attention turns to integrating these capabilities into a 300mm pilot fab, which can study directed self-assembly in the context of a semiconductor fabrication environment and equipment set. The primary aim of this study is to create a 300mm baseline process of record using a 12nm half-pitch PS-b-PMMA lamellae block copolymer in order to establish an initial measurement of the defect density due to inherent polymer phase separation defects such as dislocations and disclinations.
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关键词
PS-b-PMMA,12nm,DSA,directed self-assembly,lamellae,quadruple patterning,defect density,dislocation
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