Low Frequency Noise Characteristics of TaSiN/HfO2/SRPO SiO2 MOSFETs

The effect of interfacial SiO2 layer resulting from Stress Relieved Pre-Oxide (SRPO) treatment on the low frequency noise characteristics of TaSiN/HfO2 MOSFETs is studied. Noise comparison with near-equivalent devices having a SiO2 interfacial layer from standard RCA process revealed better overall performance with the new process. Further analysis using the correlated mobility-number fluctuations model yielded close values for the oxide trap density and a considerably different Coulomb scattering coefficient values. In general, SRPO oxide improved the device performance that is further made evident by the mobility values obtained from the split C-V measurements.