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Advanced Process and Device Modeling of Full-Frame CCD Imagers (invited Paper)

CJ Wordelman,EK Banghart

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE（2005）

Cited 1|Views4
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Abstract
Using Synopsys TCAD tools, several examples of advanced process and device modeling are presented for full-frame CCD image sensors. The topics covered in these examples include channel potential, charge capacity, charge transport, and charge blooming. The simulations provide in depth analysis of the basic principles of operation of CCDs and cover some aspects of anti-blooming protection.
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Key words
charge-coupled devices (CCDs),pixel,channel potential,charge capacity,fringing electric field,charge transfer efficiency (CTE),charge blooming,lateral overflow drain (LOD)
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