A Multi-Physics Computational Framework To Predict Dishing And Erosion In Patterned Wafers

The prediction of dishing and erosion caused by CMP is desired as they adversely affect the electrical properties of interconnects in integrated circuits. For a model to properly capture these phenomena, it must account for the time dependent surface evolution in CMP. This work employs the previously introduced Particle-Augmented Mixed Lubrication (PAML) model to predict dishing and erosion in CMP. By using PAML to model the polishing of a patterned wafer, it is possible to predict the dishing and erosion experienced during CMP.