Ac-Sonos: A Single-Poly, Assist-Charge Induced Source-Side-Injection Sonos Low Power Nonvolatile Memory

A novel SONOS memory with an assist-charge (AC) structure is proposed to achieve both fast cell programming time of 0.1 mu s and low programming current (< 10 mu A). The assist-charge serves the function of a split gate and it electrically emulates programming by source-side injection (SSI). This very simple single-poly structure shows good promise for future low power, high speed and high-density applications.