OPTICAL GAIN SPECTRA AND LASER ACTION OF InGaN/GaN MQWs GROWN ON SILICON AT PUMPING BY FEMTOSECOND PULSES

Laser properties of InGaN/GaN heterostructures grown on silicon substrates were investigated under optical pumping by laser pulses of femtosecond duration. Gain spectra in the structures investigated were examined using the method of variable excitation stripe length. It was shown that laser spectra as well as optical gain spectra inside the structure are broadened considerably. Reasons causing spectra broadening are discussed.