Analysis On Forward-Biased Electrostatic-Discharge-Induced Degradation Of Inp-Based Buried Heterostructure Laser Diodes
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2(2009)
摘要
We clarified the mechanism of forward-biased electrostatic-discharge-induced degradation of InP-based laser diodes. This degradation was caused by melting of the active layer as a result of light absorption. We observed a reduction in tolerance on aging in uncoated laser diodes. This reduction was suppressed by facet coating.
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关键词
InP, ESD, BH, LD, degradation, aging, reliability, facet coating
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